High-Performance Nanocomposite Based Memristor with Controlled Quantum Dots as Charge Traps

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• 作者：Adnan Younis ; Dewei Chu ; Xi Lin ; Jiabao Yi ; Feng Dang ; Sean Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：March 27, 2013
• 年：2013
• 卷：5
• 期：6
• 页码：2249-2254
• 全文大小：418K
• 年卷期：v.5,no.6(March 27, 2013)
• ISSN：1944-8252

文摘

We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO₂) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO₂ QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO₂ QDs were embedded into a ZnO NR array by dip coating to obtain a CeO₂鈥揨nO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO₂ nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.

Keywords:

electrochemical deposition; solvothermal process; resistive switching; quantum dots; charge traps; charge transport