Transport Gap Opening and High On鈥揙ff Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

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• 作者：Han-Chun Wu ; Alexander N. Chaika ; Tsung-Wei Huang ; Askar Syrlybekov ; Mourad Abid ; Victor Yu. Aristov ; Olga V. Molodtsova ; Sergey V. Babenkov ; D. Marchenko ; Jaime S谩nchez-Barriga ; Partha Sarathi Mandal ; Andrei Yu. Varykhalov ; Yuran Niu ; Barry E. Murphy ; Sergey A. Krasnikov ; Olaf L眉bben ; Jing Jing Wang ; Huajun Liu ; Li Yang ; Hongzhou Zhang ; Mohamed Abid ; Yahya T. Janabi ; Sergei N. Molotkov ; Ching-Ray Chang ; Igor Shvets
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：September 22, 2015
• 年：2015
• 卷：9
• 期：9
• 页码：8967-8975
• 全文大小：697K
• ISSN：1936-086X

文摘

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on鈥搊ff current ratio is the central question in this field. Here, we propose a simple method to achieve a current on鈥搊ff ratio of 10⁴ by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of 鈭?.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on鈥搊ff current ratios using graphene on cubic-SiC.