Experimental Relation between Stranski−Krastanov Growth of DIP/F16CoPc Heterostructures and the Reconstruction of the Organic Interface

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• 作者：Dimas G. de Oteyza*^† ; ; Esther Barrena^‡ ; ^§ ; ; Yi Zhang^‡ ; ; Tobias N. Krauss^‡ ; ; Ayse Turak^‡ ; ; Alexei Vorobiev<
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：March 19, 2009
• 年：2009
• 卷：113
• 期：11
• 页码：4234-4239
• 全文大小：281K
• 年卷期：v.113,no.11(March 19, 2009)
• ISSN：1932-7455

文摘

By a combined AFM/X-ray study, we unveil a reconstruction at the organic interface accompanying the Stranski−Kranstanov growth of di-indenoperylene (DIP) deposited on fluorinated cobalt-phthalocyanines (F₁₆CoPc). This reconstruction involves an abrupt change in the F₁₆CoPc packing in those areas covered by DIP. After the total completion of the first DIP monolayer, the entire F₁₆CoPc interfacial layer is reconstructed and eventually becomes buried under the growing DIP film. We demonstrate that the morphological transition from smooth to highly textured heterostructures occurring at a threshold temperature of 70 °C is intimately related to the thermal activation of the reconstruction of the underlying F₁₆CoPc layers. This study provides further understanding of the molecular-scale processes that ultimately determine the controlled growth of organic heterojunctions.