Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains

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• 作者：Pratik Agnihotri ; Prathamesh Dhakras ; Ji Ung Lee
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：4355-4360
• 全文大小：398K
• 年卷期：0
• ISSN：1530-6992

文摘

In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication and characterization of the BJT are important for both technological importance and historical significance. Here, we demonstrate a BJT device in exfoliated TMD semiconductor WSe₂. We use buried gates to electrostatically create doped regions with back-to-back p–n junctions. We demonstrate two central characteristics of a bipolar device: current gain when operated as a BJT and a photocurrent gain when operated as a phototransistor. We demonstrate a current gain of 1000 and photocurrent gain of 40 and describe features that enhance these properties due to the doping technique that we employ.