文摘
Intermediate band semiconductors have raised interest as materials to both enhance photovoltaics’ efficiency and promote photocatalytic activity driven by visible light. The present work shows the synthesis of In<sub>2sub>S<sub>3sub> doped with four different ratios of V using the ILGAR technique. This nebulize-spray based technique allows the deposition of In<sub>2sub>(V)S<sub>3sub> thin layers controlling the layer thickness and providing high reliability on sample preparation. The samples have been characterized by X-ray diffraction, electron microscopy, profilometry, UV–vis spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoemission spectroscopy, surface photovoltage spectroscopy, time-resolved microwave conductivity, photoelectrochemical, photoluminescence measurements, and electrochemical impedance spectroscopy. An optimum of 1.4% V content yielded the highest enhancement of photocurrent density compared to undoped In<sub>2sub>S<sub>3sub>. The results suggest that the inclusion of V in the In<sub>2sub>S<sub>3sub> at 1.4% yields a high amount of in-gap levels within the crystalline structure that causes a Fermi energy level shift, which also induces the shift of the level of both valence and conduction bands.