Fabrication of Graphene with CuO Islands by Chemical Vapor Deposition

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• 作者：Yun Qi ; Jeremy R. Eskelsen ; Ursula Mazur ; K. W. Hipps
• 刊名：Langmuir
• 出版年：2012
• 出版时间：February 21, 2012
• 年：2012
• 卷：28
• 期：7
• 页码：3489-3493
• 全文大小：321K
• 年卷期：v.28,no.7(February 21, 2012)
• ISSN：1520-5827

文摘

Graphene prepared on Cu foil by chemical vapor deposition was studied as a function of post growth cooling conditions. CuO islands embedded in the graphene film were discovered and studied by scanning electron microscopy, atomic force microscopy, and X-ray photoemission spectroscopy. It is shown that nanostructured holes can be formed within a graphene film by reduction using hydrogen cooling immediately after film growth. We also observe the formation of symmetrical oxide islands in these holes. This study provides an easy way to fabricate a graphene + CuO composite, and the method may be extended to other graphene based structures.