The title compounds were s
ynthesized from RE, REX
3, and Ge under an Ar atmosphere at 1200-1370 K. Y
2GeI
2and Gd
2GeI
2 cr
ystallize in space group
R
m with lattice constants
a = 4.2135(3) and 4.2527(1) Å and
c = 31.480(2)and 31.657(1) Å, respectivel
y. Gd
2GeBr
2 cr
ystallizes in two modifications, the 1T-t
ype (space group
P
m1;
a =4.1668(2) Å,
c = 9.8173(6) Å) and the 3R-t
ype (space group
R
m;
a = 4.1442(9) Å,
c = 29.487(7) Å). Thestructural motifs of RE
2GeX
2 compounds are Ge-centered slightl
y distorted RE
6 octahedra connected via theircommon edges and extending in the
a and
b directions. The resulting close-packed double la
yers are separatedb
y halogen atoms. The electrical resistivit
y measurements revealed semiconductor behavior for Y
2GeI
2 and Gd
2GeI
2and a metal-semiconductor transition for 1T-Gd
2GeBr
2. Magnetic susceptibilit
y and heat capacit
y measurementsshow long-range magnetic ordering for Gd
2GeI
2 and 1T-Gd
2GeBr
2 at ~15 and ~13 K, respectivel
y.