Fractionally 未-Doped Oxide Superlattices for Higher Carrier Mobilities

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• 作者：Woo Seok Choi ; Suyoun Lee ; Valentino R. Cooper ; Ho Nyung Lee
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：September 12, 2012
• 年：2012
• 卷：12
• 期：9
• 页码：4590-4594
• 全文大小：360K
• 年卷期：v.12,no.9(September 12, 2012)
• ISSN：1530-6992

文摘

A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional 未-doping to control the interface鈥檚 composition in La_xSr_1鈥?i>xTiO₃/SrTiO₃ artificial oxide superlattices, the filling-controlled 2D insulator鈥搈etal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.

Keywords:

Perovskite oxide 2DEG; pulsed laser epitaxy; fractional superlattices; band-filling control; multichannel conduction; effective mass