A Graphene-Based Hot Electron Transistor
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- 作者：Sam Vaziri ; Grzegorz Lupina ; Christoph Henkel ; Anderson D. Smith ; Mikael 脰stling ; Jarek Dabrowski ; Gunther Lippert ; Wolfgang Mehr ; Max C. Lemme
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：13
- 期：4
- 页码：1435-1439
- 全文大小：343K
- 年卷期：v.13,no.4(April 10, 2013)
- ISSN：1530-6992
文摘
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10<sup>4sup>.