One-Step Selective Chemistry for Silicon-on-Insulator Sensor Geometries

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• 作者：Oliver Seitz ; Poornika G. Fernandes ; Gazi A. Mahmud ; Huang-Chun Wen ; Harvey J. Stiegler ; Richard A. Chapman ; Eric M. Vogel ; Yves J. Chabal
• 刊名：Langmuir
• 出版年：2011
• 出版时间：June 21, 2011
• 年：2011
• 卷：27
• 期：12
• 页码：7337-7340
• 全文大小：780K
• 年卷期：v.27,no.12(June 21, 2011)
• ISSN：1520-5827

文摘

A one-step functionalization process has been developed for oxide-free channels of field effect transistor structures, enabling a self-selective grafting of receptor molecules on the device active area, while protecting the nonactive part from nonspecific attachment of target molecules. Characterization of the self-organized chemical process is performed on both Si(100) and SiO₂ surfaces by infrared and X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. This selective functionalization leads to structures with better chemical stability, reproducibility, and reliability than current SiO₂-based devices using silane molecules.