UV Laser Photolysis of Disiloxanes for Chemical Vapor Deposition of Nano-Textured Silicones

详细信息    查看全文

• 作者：Josef Pola ; Anna Galí ; ková ; Aftanas Galí ; k ; Vratislav Blechta ; Zden//pubs.acs.org/images/entities/ecaron.gif" border="0">k Bastl ; Jan //pubs.acs.org/im
• 刊名：Chemistry of Materials
• 出版年：2002
• 出版时间：January 2002
• 年：2002
• 卷：14
• 期：1
• 页码：144 - 153
• 全文大小：414K
• 年卷期：v.14,no.1(January 2002)
• ISSN：1520-5002

文摘

Gas-phase photolysis of methyldisiloxanes [(CH₃)_nH_3-nSi]₂O (n = 1-3) has been achievedfor the first time through absorption of ArF laser radiation at 193 nm and has been shownto yield C₁-C₂ hydrocarbons (major volatile products), methylsilanes (minor volatileproducts), and solid methylsilicones with their H(Si) content and Si/O ratio reflecting thoseof the parent compounds. The identified volatile and solid products are compatible with anumber of reactions occurring within less than 1 ms in a narrow region of the gaseous samplemaintained at room temperature. These reactions are discussed. The solid deposited materialswere characterized by FTIR, NMR, UV, and XP spectroscopy, electron microscopy, andthermal gravimetry. They were revealed to contain all possible SiC_xH_yO_z (x + y + z = 4)compositions, to possess nanometer-sized texture, and to be thermally more stable than linearpoly(dialkylsiloxanes).