The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high 魏 dielectric T-gate and self-aligned contacts further contributed to the record-breaking fmax.
Keywords:
Epitaxial graphene; silicon carbide; field effect transistors; high frequency electronics; nanoelectronics; maximum oscillation frequency