Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect Transistors

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• 作者：Timothy P. Osedach ; Ni Zhao ; Trisha L. Andrew ; Patrick R. Brown ; Darcy D. Wanger ; David B. Strasfeld ; Liang-Yi Chang ; Moungi G. Bawendi ; Vladimir Bulovi膰
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：April 24, 2012
• 年：2012
• 卷：6
• 期：4
• 页码：3121-3127
• 全文大小：441K
• 年卷期：v.6,no.4(April 24, 2012)
• ISSN：1936-086X

文摘

We investigate the bias-stress effect in field-effect transistors (FETs) consisting of 1,2-ethanedithiol-treated PbS quantum dot (QD) films as charge transport layers in a top-gated configuration. The FETs exhibit ambipolar operation with typical mobilities on the order of <b>渭b>b>eb> = 8 脳 10^鈥? cm² V^鈥? s^鈥? in n-channel operation and <b>渭b>b>hb> = 1 脳 10^鈥? cm² V^鈥? s^鈥? in p-channel operation. When the FET is turned on in n-channel or p-channel mode, the established drain鈥搒ource current rapidly decreases from its initial magnitude in a stretched exponential decay, manifesting the bias-stress effect. The choice of dielectric is found to have little effect on the characteristics of this bias-stress effect, leading us to conclude that the associated charge-trapping process originates within the QD film itself. Measurements of bias-stress-induced time-dependent decays in the drain鈥搒ource current (Ib>DSb>) are well fit to stretched exponential functions, and the time constants of these decays in n-channel and p-channel operation are found to follow thermally activated (Arrhenius) behavior. Measurements as a function of QD size reveal that the stressing process in n-channel operation is faster for QDs of a smaller diameter while stress in p-channel operation is found to be relatively invariant to QD size. Our results are consistent with a mechanism in which field-induced nanoscale morphological changes within the QD film result in screening of the applied gate field. This phenomenon is entirely recoverable, which allows us to repeatedly observe bias stress and recovery characteristics on the same device. This work elucidates aspects of charge transport in chemically treated lead chalcogenide QD films and is of relevance to ongoing investigations toward employing these films in optoelectronic devices.<br>

Keywords:

lead sulfide; quantum dot; ligand exchange; field-effect transistor; bias-stress effect