Activation of Organic Photovoltaic Light Detectors Using Bend Leakage from Optical Fibers
详细信息    查看全文
文摘
This work investigates the detection and subsequent utilization of leaked light from bends in a silica optical fiber using organic photovoltaic detectors. The optic power lost by single mode and multimode silica optical fibers was calibrated for bend radii between 1 and 7 mm for 532 and 633 nm light, exhibiting excellent agreement with previous theoretical solutions. The spatial location of maximum power leakage on the exterior of the fiber was found to exist in the same plane as the fiber, with a 10° offset from the normal. Two different organic photovoltaic detectors fabricated using a poly(3-hexylthiophene):indene-C60-bisadduct donor–acceptor blend cast from chloroform and chlorobenzene were fabricated to detect the leaked light. The two detectors exhibited different photovoltaic performances, predominantly due to different active layer thicknesses. Both devices showed sensitivity to leakage light, exhibiting voltages between 200 and 300 mV in response to leaked light from the fiber. The temporal responses of the devices were observed to differ, with a rise time from 10% to 90% of maximum voltage of 1430 μs for the chlorobenzene device, and a corresponding rise time of 490 μs for the higher performing chloroform device. The two OPVs were used to simultaneously detect leaked light from induced bends in the optical fiber, with the differing temporal profiles employed to create a unique time-correlated detection signal with enhanced security. The delay between detection of each OPV voltage could be systematically varied, allowing for either a programmable and secure single detection signal or triggering of multiple events with variable time resolution. The results reported in this study present exciting avenues toward the deployment of this simple and noninvasive optical detection system in a range of different applications.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700