State-of-the-Art Graphene High-Frequency Electronics
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- 作者：Yanqing Wu ; Keith A. Jenkins ; Alberto Valdes-Garcia ; Damon B. Farmer ; Yu Zhu ; Ageeth A. Bol ; Christos Dimitrakopoulos ; Wenjuan Zhu ; Fengnian Xia ; Phaedon Avouris ; Yu-Ming Lin
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：June 13, 2012
- 年：2012
- 卷：12
- 期：6
- 页码：3062-3067
- 全文大小：368K
- 年卷期：v.12,no.6(June 13, 2012)
- ISSN：1530-6992
文摘
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.