Five New Chalcohalides, Ba3GaS4X (X = Cl, Br), Ba3MSe4Cl (M = Ga, In), and Ba7In2Se6F8: Syntheses, Crystal Struc

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• 作者：Kai Feng ; Wenlong Yin ; Zuohong Lin ; Jiyong Yao ; Yicheng Wu
• 刊名：Inorganic Chemistry
• 出版年：2013
• 出版时间：October 7, 2013
• 年：2013
• 卷：52
• 期：19
• 页码：11503-11508
• 全文大小：344K
• 年卷期：v.52,no.19(October 7, 2013)
• ISSN：1520-510X

文摘

Five new chalcohalides, Ba₃GaS₄X (X = Cl, Br), Ba₃MSe₄Cl (M = Ga, In), and Ba₇In₂Se₆F₈, have been synthesized by conventional high-temperature solid-state method. These compounds crystallize in three different interesting structure types. Ba₃GaQ₄X (Q = S, X = Cl, Br; Q = Se, X = Cl) contain zigzag BaX pseudolayers and isolated GaQ₄ tetrahedra, while Ba₃InSe₄Cl possesses one Ba鈥揑n鈥揝e pseudolayer and one Ba鈥揅l pseudolayer, which are stacked alternately along the c-direction. Ba₇In₂Se₆F₈ is comprised of one-dimensional ₁^{鈭?/sup>[InSe₃]3鈥?/sup> chains and unique [Ba₇F₈]6+ chains. In all those mixed anion compounds, the halide anions are only connected to alkaline-earth metal through strong ionic bonding, while the M (M = Ga, In) cations are only connected to chalcogenide anions through covalent bonding. UV鈥搗is-NIR spectroscopy measurements indicate that Ba₃GaQ₄X (Q = S, X = Cl, Br; Q = Se, X = Cl) have band gaps of 2.14, 1.80, and 2.05 eV, respectively.}