High-Performance Transistor Based on Individual Single-Crystalline Micrometer Wire of Perylo[1,12-b,c,d]thiophene

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• 作者：Yanming Sun ; Lin Tan ; Shidong Jiang ; Hualei Qian ; Zhaohui Wang ; Dongwei Yan ; Chongan Di ; Ying Wang ; Weiping Wu ; Gui Yu ; Shouke Yan ; Chunru Wang ; Wenping Hu ; Yunqi Liu ; Daoben Zhu
• 刊名：Journal of the American Chemical Society
• 出版年：2007
• 出版时间：February 21, 2007
• 年：2007
• 卷：129
• 期：7
• 页码：1882 - 1883
• 全文大小：108K
• 年卷期：v.129,no.7(February 21, 2007)
• ISSN：1520-5126

文摘

We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm² V^-1 s^-1, an on/off ratio of 10⁵, and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm² V^-1 s^-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S···S interactions may contribute to the high performance.