Solid-State Reaction Synthesis of a InSe/CuInSe2 Lateral p鈥搉 Heterojunction and Application in High Performance Optoelectronic Devices

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• 作者：Wei Feng ; Wei Zheng ; XiaoShuang Chen ; Guangbo Liu ; Wenwu Cao ; PingAn Hu
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：February 10, 2015
• 年：2015
• 卷：27
• 期：3
• 页码：983-989
• 全文大小：527K
• ISSN：1520-5002

文摘

Graphene-like layered semiconductors are a new class of materials for next generation electronic and optoelectronic devices due to their unique electrical and optical properties. A p鈥搉 junction is an elementary building block for electronics and optoelectronics devices. Here, we demonstrate the fabrication of a lateral p鈥搉 heterojunction diode of a thin-film InSe/CuInSe₂ nanosheet by simple solid-state reaction. We discover that InSe nanosheets can be easily transformed into CuInSe₂ thin film by reacting with elemental copper at a temperature of 300 掳C. Photodetectors and photovoltaic devices based on this lateral heterojunction p鈥搉 diode show a large photoresponsivity of 4.2 A W^鈥? and a relatively high light-power conversion efficiency of 3.5%, respectively. This work is a giant step forward in practical applications of two-dimensional materials for next generation optoelectronic devices.