Axial p鈥搉 Nanowire Gated Diodes as a Direct Probe of Surface-Dominated Charge Dynamics in Semiconductor Nanomaterials

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• 作者：Tae Woong Koo ; Duk Soo Kim ; Jae-Hyun Lee ; Young Chai Jung ; Ji-Woong Lee ; Yun Seop Yu ; Sung Woo Hwang ; Dongmok Whang
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：December 1, 2011
• 年：2011
• 卷：115
• 期：47
• 页码：23552-23557
• 全文大小：905K
• 年卷期：v.115,no.47(December 1, 2011)
• ISSN：1932-7455

文摘

Axially doped p鈥搉 silicon nanowire (SiNW) gated diodes are fabricated, and their electrical properties are investigated to demonstrate the enhanced surface effects on the nanoscale devices of semiconductor nanomaterials. The fabricated p鈥搉 SiNW exhibited clear rectifying characteristics with an ideality factor of 2. More interestingly, the gated p鈥搉 SiNW showed a switching behavior as a function of the gate bias with almost complete turn-off of the forward current. The observed ideality factor and gated diode characteristics were explained with surface trap states of the nanowires. Systematic 3D device simulation quantitatively confirms that the surface states are a key factor in determining such surface-dominated characteristics. This work would serve the fundamental and in-depth understanding of the surface properties in the various nanoscale 1D devices.