Comparison of the Deposition Behavior of Charged Silicon Nanoparticles between Floating and Grounded Substrates
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文摘
Nanoparticle-based crystallization has become an important issue since the direct observation of the growth of nanorods or crystals from nanoparticles as the building block in a liquid cell by transmission electron microscopy. The growth of crystals by the fusion or coalescence of nanoparticles requires an unusually high rate of atomic diffusion. Evidences indicate that such a high rate of diffusion may be realized from the electric charge carried by the nanoparticles. In this work, the effect of nanoparticle charge on nanoparticle-based crystallization was studied by comparing the deposition behavior of charged silicon nanoparticles between electrically floating and grounded silicon substrates. Under the same processing condition, nanowires were grown on the floating substrate and nanoparticles were grown on the grounded substrate, or a dense film was grown on the floating substrate and a porous film was grown on the grounded substrate.

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