Enhanced Performance of Solution-Processed Amorphous LiYInZnO Thin-Film Transistors

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• 作者：Chang Young Koo ; Keunkyu Song ; Yangho Jung ; Wooseok Yang ; Seung-Hyun Kim ; Sunho Jeong ; Jooho Moon
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：March 28, 2012
• 年：2012
• 卷：4
• 期：3
• 页码：1456-1461
• 全文大小：475K
• 年卷期：v.4,no.3(March 28, 2012)
• ISSN：1944-8252

文摘

Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O₃/O₂ environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

Keywords:

amorphous ionic oxide semiconductor; sol鈭抔el; solution-processed; yttrium indium zinc oxide; semiconductor; thin-film transistor