Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

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• 作者：Shu Zhou ; Zhenyi Ni ; Yi Ding ; Michihiro Sugaya ; Xiaodong Pi ; Tomohiro Nozaki
• 刊名：ACS Photonics
• 出版年：2016
• 出版时间：March 16, 2016
• 年：2016
• 卷：3
• 期：3
• 页码：415-422
• 全文大小：730K
• ISSN：2330-4022

文摘

Colloidal heavily doped silicon nanocrystals (Si NCs) exhibiting tunable localized surface plasmon resonance (LSPR) are of great interest in cost-effective, solution-processed optoelectronic devices given the abundance and nontoxicity of Si. In this work we show that tunable plasmonic properties and colloidal stability without the use of ligands can be simultaneously obtained for Si NCs heavily doped with boron (B). The heavily B-doped Si NC colloids are found to be stable in air for months, opening up the possibility of device processing in ambient atmosphere. The optical absorption of heavily B-doped Si NCs reveals that the heavy B doping not only changes the concentration of free carriers that are confined in Si NCs but also modifies the band structure of Si NCs. After heavy B doping both indirect and direct electronic transition energies remarkably decrease in Si NCs because the heavy B doping induced movement of the conduction band toward the band gap could be more significant than that of the Fermi level into the valence band. The LSPR of heavily B-doped Si NCs originates from free holes above the Fermi level, which are largely from the B-induced impurity band.