Raman Spectral Probing of Electronic Transition Energy Eii Variation of Individual SWNTs under Torsional Strain
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- 作者：Bo Gao ; Xiaojie Duan ; Jin Zhang ; Tianjiao Wu ; Hyungbin Son ; Jing Kong ; Zhongfan Liu
- 刊名：Nano Letters
- 出版年：2007
- 出版时间：March 2007
- 年：2007
- 卷：7
- 期：3
- 页码：750 - 753
- 全文大小：214K
- 年卷期：v.7,no.3(March 2007)
- ISSN：1530-6992
文摘
We present herein a rational approach to probe the torsional strain-induced electronic transition energy Eii variation of individual SWNTs byresonant Raman spectroscopy (RRS). When a SWNT was manipulated by AFM tip through a path perpendicular to SWNT axis, both torsionaland uniaxial strain would be introduced in SWNTs. Under the torsional strain, resonant Raman spectral mapping along a SWNT detected anM-shaped frequency (
RBM) and W-shaped intensity (IS) variation of radial breathing mode (RBM) spectra, which were induced by the elasticretraction of the nanotubes in combination with the friction after the tip has been removed. The electronic transition energy Eii variation alongSWNTs by torsional strain follows a family pattern based on q = (n - m) mod 3: for semiconducting SWNTs, E33S increases for q = +1, E33Sdecreases and E22S increases for q = -1, and for metallic SWNTs, E11M always increases.
RBM) and W-shaped intensity (IS) variation of radial breathing mode (RBM) spectra, which were induced by the elasticretraction of the nanotubes in combination with the friction after the tip has been removed. The electronic transition energy Eii variation alongSWNTs by torsional strain follows a family pattern based on q = (n - m) mod 3: for semiconducting SWNTs, E33S increases for q = +1, E33Sdecreases and E22S increases for q = -1, and for metallic SWNTs, E11M always increases.