Tin-Catalyzed Plasma-Assisted Growth of Silicon Nanowires
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- 作者：Somilkumar J. Rathi ; Bhavin N. Jariwala ; Joseph D. Beach ; Paul Stradins ; P. Craig Taylor ; Xiaojun Weng ; Yue Ke ; Joan M. Redwing ; Sumit Agarwal ; Reuben T. Collins
- 刊名：Journal of Physical Chemistry C
- 出版年：2011
- 出版时间：March 17, 2011
- 年：2011
- 卷：115
- 期：10
- 页码：3833-3839
- 全文大小：1003K
- 年卷期：v.115,no.10(March 17, 2011)
- ISSN：1932-7455
文摘
A systematic study of tin-catalyzed vapor鈭抣iquid鈭抯olid (VLS) growth of silicon nanowires by plasma-enhanced chemical vapor deposition at temperatures ranging from 300 to 400 掳C is presented. Wire structure, morphology, and growth rate are characterized as a function of process variables. The nanowires are observed to have a crystalline core with a polycrystalline shell due to simultaneous VLS axial growth and vapor鈭抯olid radial growth. Axial and radial growth rates are controllable through hydrogen dilution of the plasma which affects the concentration of silane radicals in the plasma. In addition, wire length is observed to saturate with increasing growth time. Post growth chemical analysis suggests this is due to etching and disappearance of tin seeds in the hydrogen plasma which occur in parallel with wire growth. This opens up the possibility of a unique in situ approach to fabricating metal-free nanowire arrays for device applications.