Boron Carbide and Silicon Oxide Hetero-nanonecklaces via Temperature Modulation

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• 作者：Jifa Tian ; Xingjun Wang ; Lihong Bao ; Chao Hui ; Fei Liu ; Tianzhong Yang ; Chengmin Shen ; Hongjun Gao
• 刊名：Crystal Growth & Design
• 出版年：2008
• 出版时间：September 3, 2008
• 年：2008
• 卷：8
• 期：9
• 页码：3160-3164
• 全文大小：427K
• 年卷期：v.8,no.9(September 3, 2008)
• ISSN：1528-7505

文摘

Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been successfully synthesized via temperature modulation. This kind of nanostructure was formed by coating 100−500 nm silicon oxide nanoballs onto 20−30 nm boron carbide nanowires. Synthetic analysis shows that a two-step model at different temperatures and the poor wettability between boron carbide and silicon oxide play important roles in the growth of hetero-nanonecklaces. Photoluminescence of the synthesized BCSiO hetero-nanonecklaces shows enhanced visible light emissions at 637.6 nm, which is attributed to the small size of the boron carbide nanowires and defects induced by silicon oxide sheaths.