Here we report unique performance transistors based on sol鈥揼el processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite thin films. In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobi
lity. Specifically, the composite thin film transistors with SWNT weight concentrations in the range of 0鈥? wt % have been investigated with the field effect mobi
lity reaching as high as 140 cm
2/V路s at 1 wt % SWNTs while maintaining a high on/off ratio 10
7. Furthermore, the introduction SWNTs into the composite thin film render excellent mechanical flexibi
lity for flexible electronics. The dynamic loading test presents evidently superior mechanical stabi
lity with only 17% variation at a bending radius as small as 700 渭m, and the repeated bending test shows only 8% norma
lized resistance variation after 300 cycles of folding and unfolding, demonstrating enormous improvement over the basic amorphous indium zinc oxide thin film. The results provide an important advance toward high-performance flexible electronics app
lications.
Keywords:
Indium zinc oxide;
carbon nanotubes;
transistor;
lity&qsSearchArea=searchText">high mobility;
flexible