Low-Temperature, Bottom-Up Synthesis of Graphene via a Radical-Coupling Reaction

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• 作者：Lang Jiang ; Tianchao Niu ; Xiuqiang Lu ; Huanli Dong ; Wei Chen ; Yunqi Liu ; Wenping Hu ; Daoben Zhu
• 刊名：The Journal of the American Chemical Society
• 出版年：2013
• 出版时间：June 19, 2013
• 年：2013
• 卷：135
• 期：24
• 页码：9050-9054
• 全文大小：366K
• 年卷期：v.135,no.24(June 19, 2013)
• ISSN：1520-5126

文摘

In this article, we demonstrated a method to synthesize graphene films at low temperature via a mild radical-coupling reaction. During the deposition process, with the effectively breaking of the C鈥揃r bonds of hexabromobenzene (HBB) precursors, the generated HBB radicals couple efficiently to form graphene films at the low temperature of 220鈥?50 掳C. In situ low-temperature scanning tunneling microscopy was used to provide atomic scale investigation of the graphene growth mechanism using HBB as precursor. The chemical structure evolution during the graphene growth process was further corroborated by in situ X-ray photoelectron spectroscopy measurements. The charge carrier mobility of the graphene film grown at low temperature is at 1000鈥?200 cm² V^鈥?聽s^鈥?, as evaluated in a field-effect transistor device configuration on SiO₂ substrates, indicating the high quality of the films.