Growth of Sb2E3 (E = S, Se) Polygonal Tubular Crystals via a Novel Solvent-Relief-Self-Seeding Process
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- 作者：Xiuwen Zheng ; Yi Xie ; Liying Zhu ; Xuchuan Jiang ; Yunbo Jia ; Wenhai Song ; and Yuping Sun
- 刊名：Inorganic Chemistry
- 出版年：2002
- 出版时间：February 11, 2002
- 年：2002
- 卷：41
- 期：3
- 页码：455 - 461
- 全文大小：223K
- 年卷期：v.41,no.3(February 11, 2002)
- ISSN：1520-510X
文摘
A novel solvent-relief-self-seeding (SRSS) process was applied to grow bulk polygonal tubular single crystals ofSb2E3 (E = S, Se), using SbCl3 and chalcogen elements E (E = S, Se) as the raw materials at 180 
C for 7 daysin ethanol solution. The products were characterized by various techniques, including X-ray powder diffraction(XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM), electronic diffraction(ED), and X-ray photoelectron spectra (XPS). The calculated electrical resistivities of the tubular single crystals inthe range 20-320 K were of the order of 105-106 
cm for Sb2S3 and 103-104 cm for Sb2Se3, respectively.The studies of the optical properties revealed that the materials formed had a band gap of 1.72 eV for Sb2S3 and1.82 eV for Sb2Se3, respectively. The optimal reaction conditions for the growth of bulk tubular single crystals werethat the temperature was not lower than 180 C and the reaction time was not shorter than 7 days. The possiblegrowth mechanism of tubular crystals was also discussed.
C for 7 daysin ethanol solution. The products were characterized by various techniques, including X-ray powder diffraction(XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM), electronic diffraction(ED), and X-ray photoelectron spectra (XPS). The calculated electrical resistivities of the tubular single crystals inthe range 20-320 K were of the order of 105-106 cm for Sb2S3 and 103-104 cm for Sb2Se3, respectively.The studies of the optical properties revealed that the materials formed had a band gap of 1.72 eV for Sb2S3 and1.82 eV for Sb2Se3, respectively. The optimal reaction conditions for the growth of bulk tubular single crystals werethat the temperature was not lower than 180 C and the reaction time was not shorter than 7 days. The possiblegrowth mechanism of tubular crystals was also discussed.