文摘
Single-crystalline Ta5Si3 nanostructures with a complex morphology were synthesized through a catalyst-free, chemical vapor deposition method under low pressures. The morphology, structure, and composition of deposited nanostructures were studied by scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy. These nanostructures have lengths of up to several tens of micrometers and an average thickness of 13 nm. It was found that the formation of networked Ta5Si3 nanostructures is highly sensitive to the vapor pressure of tantalum chloride and silica and is based on a vapor鈥搒olid mechanism. Results indicate that, with the decrease of silica vapor pressure, the Ta5Si3 networked nanowires evolve into networked nanoribbons and nanosheets via two-dimensional growth. Cyclic voltammetry measurements of the Ta5Si3 nanostructures show superior electrochemical capacitance properties of nanosheets compared to nanowires. It is expected that these nanostructures have great potential applications for nanodevices in electronic and energy related applications.