Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches
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- 作者：Yajie Dong ; Guihua Yu ; Michael C. McAlpine ; Wei Lu ; Charles M. Lieber
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：February 2008
- 年：2008
- 卷：8
- 期：2
- 页码：386 - 391
- 全文大小：243K
- 年卷期：v.8,no.2(February 2008)
- ISSN：1530-6992
文摘
Radial core/shell nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring fundamentalelectronic properties and realizing novel device applications at the nanoscale. Here, we report the synthesis of crystalline silicon/amorphoussilicon (Si/a-Si) core/shell NWs and studies of crossed Si/a-Si NW metal NW (Si/a-Si × M) devices and arrays. Room-temperature electricalmeasurements on single Si/a-Si × Ag NW devices exhibit bistable switching between high (off) and low (on) resistance states with well-definedswitching threshold voltages, on/off ratios greater than 104, and current rectification in the on state. Temperature-dependent switching experimentssuggest that rectification can be attributed to barriers to electric field-driven metal diffusion. Systematic studies of Si/a-Si × Ag NW devicesshow that (i) the bit size can be at least as small as 20 nm × 20 nm, (ii) the writing time is <100 ns, (iii) the retention time is >2 weeks, and(iv) devices can be switched >104 times without degradation in performance. In addition, studies of dense one-dimensional and two-dimensionalSi/a-Si × Ag NW devices arrays fabricated on crystalline and plastic substrates show that elements within the arrays can be independentlyswitched and read, and moreover that bends with radii of curvature as small as 0.3 cm cause little change in device characteristics. TheSi/a-Si × Ag NW devices represent a highly scalable and promising nanodevice element for assembly and fabrication of dense nonvolatilememory and programmable nanoprocessors.