Nucleation Control of Cubic Silicon Carbide on 6H- Substrates

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• 作者：Remigijus Vasiliauskas ; Maya Marinova ; Philip Hens ; Peter Wellmann ; Mikael Syv盲j盲rvi ; Rositza Yakimova
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：January 1, 2012
• 年：2012
• 卷：12
• 期：1
• 页码：197-204
• 全文大小：469K
• 年卷期：v.12,no.1(January 1, 2012)
• ISSN：1528-7505

文摘

The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature range 1500鈥?775 掳C by the technique of sublimation epitaxy. We have studied two different cases: (i) the initial homoepitaxial growth of 6H-SiC followed by nucleation of 3C-SiC and (ii) nucleation of homoepitaxial 6H-SiC islands. The supersaturation in the growth cell was calculated using the modeled source to substrate temperature difference. We show that, at low temperature and supersaturation, growth of 6H-SiC commences in spiral growth mode, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, the 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Detailed structural study indicates that the 3C-SiC began to grow on defect free surfaces. From the experimental and modeling results, we show that the growth parameter window for 3C-SiC is rather narrow. Deviation from it can result in 6H-SiC growth in spiral or 2D-nucleation mode, which suggests the importance of knowledge of supersaturation.