Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

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• 作者：Thomas Maassen ; J. Jasper van den Berg ; Natasja IJbema ; Felix Fromm ; Thomas Seyller ; Rositza Yakimova ; Bart J. van Wees
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1498-1502
• 全文大小：266K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times 蟿_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of 蟿_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.

Keywords:

Spin transport; Hanle precession; graphene; epitaxial growth