Electrical and Optical Properties of an Organic Semiconductor Based on Polyaniline Prepared by Emulsion Polymerization and Fabrication of Ag/Polyaniline/n-Si Schottky Diode
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- 作者：F. Yakuphanoglu ; E. Basaran ; B. F.
//pubs.acs.org/images/entities/Scedil.gif" border="0">enkal ; E. Sezer
- 刊名：Journal of Physical Chemistry B
- 出版年：2006
- 出版时间：August 31, 2006
- 年：2006
- 卷：110
- 期：34
- 页码：16908 - 16913
- 全文大小：121K
- 年卷期：v.110,no.34(August 31, 2006)
- ISSN：1520-5207
文摘
The electrical, optical, and metal-semiconductor contact properties of the polyaniline prepared by emulsionpolymerization have been investigated to obtain an organic semiconductor material. The obtained resultssuggest that the polyaniline (PANI) studied is an organic semiconductor material with optical band gap (Eg= 2.21 eV) and room electrical conductivity (
fchars/sigma.gif" BORDER=0 >25 = 3.12 × 10-2 S/cm) values. A Schottky diode withconfiguration Ag/PANI/n-Si was fabricated. The ideality factor and barrier height of Ag/PANI/n-Si diode atroom temperature were found to be 4.59 and 0.38 eV, respectively. The obtained diode parameters changewith temperature. The Richardson constant A* value for the Ag/PANI/n-Si diode was found to be 3.81 ×10-4 A/cm2·K. The Ag/PANI/n-Si diode is a metal-insulator-semiconductor-type device. The standarddeviation, which is a measure of the barrier homogeneity, was found to be 0.14, indicating the presence ofinterface inhomogeneities. It can be concluded that the polyaniline prepared by emulsion polymerization isan organic semiconductor and Ag/PANI/n-Si configuration shows a Schottky contact.
fchars/sigma.gif" BORDER=0 >25 = 3.12 × 10-2 S/cm) values. A Schottky diode withconfiguration Ag/PANI/n-Si was fabricated. The ideality factor and barrier height of Ag/PANI/n-Si diode atroom temperature were found to be 4.59 and 0.38 eV, respectively. The obtained diode parameters changewith temperature. The Richardson constant A* value for the Ag/PANI/n-Si diode was found to be 3.81 ×10-4 A/cm2·K. The Ag/PANI/n-Si diode is a metal-insulator-semiconductor-type device. The standarddeviation, which is a measure of the barrier homogeneity, was found to be 0.14, indicating the presence ofinterface inhomogeneities. It can be concluded that the polyaniline prepared by emulsion polymerization isan organic semiconductor and Ag/PANI/n-Si configuration shows a Schottky contact.