Electronic and Thermoelectric Properties of Polyaniline Organic Semiconductor and Electrical Characterization of Al/PANI MIS Diode
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- 作者：F. Yakuphanoglu ; B. F.
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- 刊名：Journal of Physical Chemistry C
- 出版年：2007
- 出版时间：February 1, 2007
- 年：2007
- 卷：111
- 期：4
- 页码：1840 - 1846
- 全文大小：148K
- 年卷期：v.111,no.4(February 1, 2007)
- ISSN：1932-7455
文摘
The electrical conductivity, thermoelectric power, and metal-insulator-semiconductor diode properties ofpolyaniline prepared in ionic liquid (PANI) have been investigated. The electrical conductivity of the polyanilineincreases exponentially with increasing temperature. The electrical conductivity value at 28 
f">C is 0.21 S/cm.The Seebeck coefficient of the PANI decreases with increasing temperature. The electrical conductivity andthermoelectric power results suggest that the PANI is a p-type semiconductor polymer. The Al/PANI Schottkydiode was fabricated and is a metal-insulator-semiconductor type device. The ideality factor n and barrierheight 
fchars/phi.gif" BORDER=0 >b values of the diode at 298 K were found to be 2.78 and 0.85 eV, respectively. The barrierinhomogeneities are a very important explanation of the higher values of the ideality factor. The Gaussiandistribution function was suggested for describing barrier height inhomogeneities. The standard deviation ofthe barrier height distribution fchars/sigma.gif" BORDER=0 >o indicates the presence of the interface inhomogeneities. The fchars/phi.gif" BORDER=0 >B value obtainedfrom C-V measurement is higher than that of the fchars/phi.gif" BORDER=0 >B value obtained I-V measurements.
f">C is 0.21 S/cm.The Seebeck coefficient of the PANI decreases with increasing temperature. The electrical conductivity andthermoelectric power results suggest that the PANI is a p-type semiconductor polymer. The Al/PANI Schottkydiode was fabricated and is a metal-insulator-semiconductor type device. The ideality factor n and barrierheight fchars/phi.gif" BORDER=0 >b values of the diode at 298 K were found to be 2.78 and 0.85 eV, respectively. The barrierinhomogeneities are a very important explanation of the higher values of the ideality factor. The Gaussiandistribution function was suggested for describing barrier height inhomogeneities. The standard deviation ofthe barrier height distribution fchars/sigma.gif" BORDER=0 >o indicates the presence of the interface inhomogeneities. The fchars/phi.gif" BORDER=0 >B value obtainedfrom C-V measurement is higher than that of the fchars/phi.gif" BORDER=0 >B value obtained I-V measurements.