Estimation of Charge-Injection Barriers at the Metal/Pentacene Interface through Accumulated Charge Measurement
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- 作者：Tomofumi KadoyaMasato Otsuka ; Akinari Ogino ; Seiichi Sato ; Tokuji Yokomatsu ; Kazusuke Maenaka ; Jun-ichi Yamada ; Hiroyuki Tajima
- 刊名：Journal of Physical Chemistry C
- 出版年：2017
- 出版时间：February 9, 2017
- 年：2017
- 卷：121
- 期：5
- 页码：2882-2888
- 全文大小：432K
- ISSN：1932-7455
文摘
The charge-injection barrier from metal electrodes to thin-film pentacene is investigated using accumulated charge measurements. When a gold electrode is deposited on a pentacene film, the interface forms a Schottky contact with a hole-injection barrier of 0.2 eV. However, interfacial carrier motion is reversible between charge injection and discharge. The result suggests that the reported electrical hysteresis in typical pentacene transistors is caused by carrier traps that are localized primarily in the SiO2/pentacene interface. The Ag/pentacene junction has a large barrier height of 0.5 eV. The barrier height is significantly reduced, and an Ohmic contact is realized by using molybdenum oxide (MoO3) as a buffer layer.