Prominent Thermodynamical Interaction with Surroundings on Nanoscale Memristive Switching of Metal Oxides

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• 作者：Kazuki Nagashima ; Takeshi Yanagida ; Keisuke Oka ; Masaki Kanai ; Annop Klamchuen ; Sakon Rahong ; Gang Meng ; Mati Horprathum ; Bo Xu ; Fuwei Zhuge ; Yong He ; Bae Ho Park ; Tomoji Kawai
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：November 14, 2012
• 年：2012
• 卷：12
• 期：11
• 页码：5684-5690
• 全文大小：433K
• 年卷期：v.12,no.11(November 14, 2012)
• ISSN：1530-6992

文摘

This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO_x and CoO_x planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO_2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO_2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO₂ passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

Keywords:

Memristive switching; surrounding effect; planar device; redox; metal oxides