Tunable Spin鈥揙rbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors
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- 作者：Zhuoyu Chen ; Hongtao Yuan ; Yanfeng Zhang ; Kentaro Nomura ; Teng Gao ; Yabo Gao ; Hidekazu Shimotani ; Zhongfan Liu ; Yoshihiro Iwasa
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：May 9, 2012
- 年：2012
- 卷：12
- 期：5
- 页码：2212-2216
- 全文大小：305K
- 年卷期：v.12,no.5(May 9, 2012)
- ISSN：1530-6992
文摘
Taking advantage of ultrahigh electric field generated in electric-double-layer transistors (EDLTs), we investigated spin鈥搊rbit interaction (SOI) and its modulation in epitaxial trilayer graphene. It was found in magnetotransport that the dephasing length L and spin relaxation length Lso of carriers can be effectively modulated with gate bias. As a direct result, SOI-induced weak antilocalization (WAL), together with a crossover from WAL to weak localization (WL), was observed at near-zero magnetic field. Interestingly, among existing localization models, only the Iordanskii鈥揕yanda-Geller鈥揚ikus theory can successfully reproduce the obtained magnetoconductance well, serving as evidence for gate tuning of the weak but distinct SOI in graphene. Realization of SOI and its large tunability in the trilayer graphene EDLTs provides us with a possibility to electrically manipulate spin precession in graphene systems without ferromagnetics.