Facile Fabrication of a Well-Ordered Porous Cu-Doped SnO2 Thin Film for H2S Sensing

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• 作者：Shumin Zhang ; Pingping Zhang ; Yun Wang ; Yanyun Ma ; Jun Zhong ; Xuhui Sun
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：September 10, 2014
• 年：2014
• 卷：6
• 期：17
• 页码：14975-14980
• 全文大小：365K
• ISSN：1944-8252

文摘

Well-ordered Cu-doped and undoped SnO₂ porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO₂ porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO₂ porous sensor is 1 order of magnitude higher than that of the undoped SnO₂ sensor, with average response and recovery times to 100 ppm of H₂S of 鈭?0.1 and 鈭?2.4 s, respectively, at the optimal operating temperature of 180 掳C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.

Keywords:

gas sensor; metal oxide; porous film; doping; SnO₂; H₂S