Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires

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• 作者：Wei Zhang ; Sebastian Lehmann ; Kilian Mergenthaler ; Jesper Wallentin ; Magnus T. Borgstr枚m ; Mats-Erik Pistol ; Arkady Yartsev
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：November 11, 2015
• 年：2015
• 卷：15
• 期：11
• 页码：7238-7244
• 全文大小：475K
• ISSN：1530-6992

文摘

Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump鈥損robe experiment.