Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma

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• 作者：Yeong-Dae Lim ; Dae-Yeong Lee ; Tian-Zi Shen ; Chang-Ho Ra ; Jae-Young Choi ; Won Jong Yoo
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：May 22, 2012
• 年：2012
• 卷：6
• 期：5
• 页码：4410-4417
• 全文大小：569K
• 年卷期：v.6,no.5(May 22, 2012)
• ISSN：1936-086X

文摘

We report a novel cleaning technique for few-layer graphene (FLG) by using inductively coupled plasma (ICP) of Ar with an extremely low plasma density of 3.5 脳 10⁸ cm^鈥?. It is known that conventional capacitively coupled plasma (CCP) treatments destroy the planar symmetry of FLG, giving rise to the generation of defects. However, ICP treatment with extremely low plasma density is able to remove polymer resist residues from FLG within 3 min at a room temperature of 300 K while retaining the carbon sp²-bonding of FLG. It is found that the carrier mobility and charge neutrality point of FLG are restored to their pristine defect-free state after the ICP treatment. Considering the application of graphene to silicon-based electronic devices, such a cleaning method can replace thermal vacuum annealing, electrical current annealing, and wet-chemical treatment due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.

Keywords:

graphene; inductively coupled plasma; cleaning; field effect transistor; charge neutrality point; silicon processing