Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode

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• 作者：Zhen Guo ; Dongxu Zhao ; Yichun Liu ; Dezhen Shen ; Bin Yao ; Zhengzhong Zhang ; Binghui Li ; Zhen Guo ; Yichun Liu
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：September 16, 2010
• 年：2010
• 卷：114
• 期：36
• 页码：15499-15503
• 全文大小：316K
• 年卷期：v.114,no.36(September 16, 2010)
• ISSN：1932-7455

文摘

The self-assembled ZnO microcrystalline film was synthesized through repeated growth by a low-temperature hydrothermal method using p-GaN wafer as a template. Well-defined peaks with 6-fold symmetry in the XRD -scan indicated the repeated grown ZnO microcrystal following an orientation relationship of [103]_ZnO||[103]_GaN. Room temperature photoluminescence (RT PL) spectra indicated that self-assembled ZnO owned a strong ultraviolet (UV) emission accompanied by a weak defects-related emission. The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN heterojunction diode.