Atomic Layer Deposition of BiFeO3 Thin Films Using 尾-Diketonates and H2O

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• 作者：Feng Zhang ; Guosheng Sun ; Wanshun Zhao ; Lei Wang ; Liu Zheng ; Shengbei Liu ; Bin Liu ; Lin Dong ; Xingfang Liu ; Guoguo Yan ; Lixin Tian ; Yiping Zeng
• 刊名：Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：November 21, 2013
• 年：2013
• 卷：117
• 期：46
• 页码：24579-24585
• 全文大小：473K
• 年卷期：v.117,no.46(November 21, 2013)
• ISSN：1932-7455

文摘

Bismuth ferrite (BiFeO₃) thin films were grown by atomic layer deposition (ALD) by combining ALD of Bi₂O₃ and Fe₂O₃ and monitored by in-situ quartz crystal microbalance (QCM). The physical and chemical mechanisms of ALD of BiFeO₃ were studied according to the results of in-situ QCM and indicate that the deposition of Bi鈥揙 and Fe鈥揙 were self-limited by molecular sizes of precursors and chemical absorption between precursors and hydroxyl groups. Pure Bi³⁺ and Fe³⁺ with atomic ratio of 1:1 were formed during the ALD, and no evaporation of Bi atoms was found at 250 掳C by X-ray photoelectron spectroscopy (XPS). Pure rhombohedral phase was formed in BiFeO₃ films after annealing at 650 掳C by using X-ray diffraction (XRD). Polarization property of the ALD BFO film was observed and studied by using piezoresponse force microscopy (PFM). The ALD growth of BFO films demonstrates that ALD is an advanced deposition technique for BFO film preparation and memory device application.