Ultralong, single-crystal Ni
2Si nanowires sheathed with amorphous silicon oxide were synthesized on a large scale by a chemical vaportransport (CVT) method, using iodine as the transport reagent and Ni
2Si powder as the source material. Structural characterization usingpowder X-ray diffraction, electron microscopy, and energy-dispersive spectroscopy shows that the nanowires have Ni
2Si-SiO
x core-shellstructure with single-crystal Ni
2Si core and amorphous silicon oxide shell. The oxide shell is electrically insulating and can be removed by HFetching. Four-terminal electrical measurements show that the single-crystal nanowire has extremely low resistivity of 21
![](/images/entities/mgr.gif)
![](/images/gifchars/Omega.gif)
·cm and is capableof supporting remarkably high failure current density >10
8 A/cm
2. These unique Ni
2Si nanowires are very attractive nanoscale building blocksfor interconnects and fully silicided (FUSI) gate applications in nanoelectronics.