Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

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• 作者：Renbing Wu ; Kun Zhou ; Jun Wei ; Yizhong Huang ; Fei Su ; Jianjun Chen ; Liuying Wang
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：June 14, 2012
• 年：2012
• 卷：116
• 期：23
• 页码：12940-12945
• 全文大小：387K
• 年卷期：v.116,no.23(June 14, 2012)
• ISSN：1932-7455

文摘

Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electronic diffraction, and energy-dispersive X-ray spectroscopy. The results revealed that the tapered nanowires were of single crystalline 尾-SiC phase with the growth direction along [111] and had a feature of zigzag faceting over the wire surfaces. Such faceting was created by a quasi-periodic placement of twinning boundaries along the wire axis, which can be explained by surface energy minimization during the growth process. Based on the characterizations and thermodynamics analysis, the Fe-assisted vapor鈥搇iquid鈥搒olid (VLS) growth mechanism of tapered SiC nanowires was discussed. Furthermore, field emission measurements showed a very low turn-on field at 1.2 V 渭m^鈥? and a high field-enhancement factor of 3368. This study shows that SiC nanowires on carbon fabric have potential applications in electronic devices and flat panel displays.