Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

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• 作者：Jiang Pu ; Yohei Yomogida ; Keng-Ku Liu ; Lain-Jong Li ; Yoshihiro Iwasa ; Taishi Takenobu
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：August 8, 2012
• 年：2012
• 卷：12
• 期：8
• 页码：4013-4017
• 全文大小：295K
• 年卷期：v.12,no.8(August 8, 2012)
• ISSN：1530-6992

文摘

Molybdenum disulfide (MoS₂) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm²/(V路s)) and a high on/off current ratio (10⁵). Furthermore, the MoS₂ transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS₂ films make them suitable for use in large-area flexible electronics.

Keywords:

Two-dimensional material; transition metal dichalcogenide; molybdenum disulfide; electric double-layer transistor; flexible electronics