文摘
In-doped ZnO nanowires were successfully fabricated by thermal evaporation of a powder mixture ofZn, In2O3, and graphite. Field emission of individual In-doped and pure ZnO nanowire was observed in situby a transmission electron microscopy. The results show that In-doped ZnO nanowires showed an enhancedfield emission properties. First-principle density functional calculations were performed to calculate theelectronic structure of the In-doped and pure ZnO in order to explain the observed field emission properties.A two-band field emission mechanics was proposed to explain the enhanced field emission from n-typedoping.