Oxygen-Aided Synthesis of Polycrystalline Graphene on Silicon Dioxide Substrates

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• 作者：Jianyi Chen ; Yugeng Wen ; Yunlong Guo ; Bin Wu ; Liping Huang ; Yunzhou Xue ; Dechao Geng ; Dong Wang ; Gui Yu ; Yunqi Liu
• 刊名：Journal of the American Chemical Society
• 出版年：2011
• 出版时间：November 9, 2011
• 年：2011
• 卷：133
• 期：44
• 页码：17548-17551
• 全文大小：797K
• 年卷期：v.133,no.44(November 9, 2011)
• ISSN：1520-5126

文摘

We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO₂) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO₂ by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO₂ substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm² V^鈥? s^鈥? in air and 472 cm² V^鈥? s^鈥? in N₂, which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.