Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage

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• 作者：Shengliang Zhang ; Huiping Du ; Jianjiang He ; Changshui Huang ; Huibiao Liu ; Guanglei Cui ; Yuliang Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 6, 2016
• 年：2016
• 卷：8
• 期：13
• 页码：8467-8473
• 全文大小：514K
• ISSN：1944-8252

文摘

The elemental N emerged uniformly in graphdiyne (GDY) after heat treatment under NH<sub>3sub> atmosphere to form N-doping GDY. The interplanar N–GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance, and superior cycling stability. In addition, N-doping might be advantageous to minimize the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials.