Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film

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• 作者：Lele Fan ; Yuliang Chen ; Qianghu Liu ; Shi Chen ; Lei Zhu ; Qiangqiang Meng ; Baolin Wang ; Qinfang Zhang ; Hui Ren ; Chongwen Zou
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 7, 2016
• 年：2016
• 卷：8
• 期：48
• 页码：32971-32977
• 全文大小：523K
• ISSN：1944-8252

文摘

In this work, high-quality VO<sub>2sub> epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO<sub>2sub>/GaN film device, we observed that the infrared transmittance and resistance of VO<sub>2sub> films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO<sub>2sub> in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO<sub>2sub>-based optoelectronic device in the future.