Fabrication of Highly Transparent and Conductive Indium鈥揟in Oxide Thin Films with a High Figure of Merit via Solution Processing

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• 作者：Zhangxian Chen ; Wanchao Li ; Ran Li ; Yunfeng Zhang ; Guoqin Xu ; Hansong Cheng
• 刊名：Langmuir
• 出版年：2013
• 出版时间：November 12, 2013
• 年：2013
• 卷：29
• 期：45
• 页码：13836-13842
• 全文大小：317K
• 年卷期：v.29,no.45(November 12, 2013)
• ISSN：1520-5827

文摘

Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium鈥搕in oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (蟻 = 7.2 脳 10^鈥? 惟路cm) with the highest figure of merit (1.19 脳 10^鈥? 惟^鈥?) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 惟/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications.